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Modeling And Electrothermal Simulation Of Sic Power Devices: Using Silvaco Atlas
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Shortens the learning cycle required to start off successful Silicon Carbide (SiC) device simulation.
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Product Details
- Intended for students, researchers, and semiconductor professionals
- Aims to expedite the learning process for successful Silicon Carbide (SiC) device simulation
- Explains SiC device simulation using Silvaco ATLAS TCAD software
- Covers modeling techniques, simulation models and parameters, and source code for device simulations
- Focuses on non-isothermal transient simulations for heat dissipation and lattice temperature rise analysis in SiC power devices under switching condition
- Targeted at students of all levels (undergraduate, graduate, research) and professionals
| Publisher | World Scientific Publishing Co Pte Ltd |
| Publication date | January 22, 2019 |
| Language | English |
| Print length | 250 pages |
| ISBN-10 | 9813237821 |
| ISBN-13 | 978-9813237827 |
| Item Weight | 2 pounds (910 grams) |
| Dimensions | 7 x 1.25 x 10 inches (17.8 x 3.2 x 25.4 cm) |
Who Should Buy?
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Device Designers
Ideal for semiconductor device designers aiming to create efficient SiC power devices using simulation tools.
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Research Engineers
Beneficial for research engineers conducting studies on power electronics and thermal management in SiC devices.
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Educational Use
Suitable for students and educators exploring power device modeling and simulation in academic settings.
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Casual Users
Not suitable for casual users lacking the technical background to operate advanced simulation tools effectively.
Product Description
Modeling And Electrothermal Simulation Of Sic Power Devices: Using Silvaco Atlas
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Semiconductors Editorial Review
MODELING AND ELECTROTHERMAL SIMULATION OF SIC POWER DEVICES: USING SILVACO ATLAS offers a comprehensive exploration into advanced semiconductor technologies. This book, published by World Scientific Publishing Co Pte Ltd, spans 250 pages and provides insights into the practical application of electrothermal simulation for silicon carbide power devices. The content is designed for professionals interested in the intricacies of modeling, and it serves as a helpful reference with its clear focus on using Silvaco Atlas. The technical details are well-structured for readers fluent in English, ensuring accessibility and a detailed understanding of the subject matter.
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Pros
- 250 pages of in-depth technical content
- Focus on silicon carbide power devices
- Clear and structured information presentation
- Useful for professionals and researchers
- Published by a reputable academic publisher
Cons
- A specialized topic may not suit all readers
Product Price History
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Features & Benefits
- Intended for students, researchers, and semiconductor professionals.
- Explains SiC device simulation using Silvaco ATLAS TCAD software.
- Covers modeling techniques, simulation models, and parameters.
- Focuses on non-isothermal transient simulations for heat dissipation and temperature rise analysis.
- Suitable for students at all levels and professionals.
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